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CTH6106PS-T52 - P-Channel MOSFET

General Description

The CTH6106PS-T52 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .

Key Features

  • Drain-Source Breakdown Voltage VDSS -60 V.
  • Drain-Source On-Resistance RDS(ON) 14m, at VGS= -10V, IDS= -17A RDS(ON) 16m, at VGS= -4.5V, IDS= -14A.
  • Continuous Drain Current at TC=25℃ ID = -61A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CTH6106PS-T52
Manufacturer CT Micro
File Size 1.00 MB
Description P-Channel MOSFET
Datasheet download datasheet CTH6106PS-T52 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CTH6106PS-T52 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -60 V  Drain-Source On-Resistance RDS(ON) 14m, at VGS= -10V, IDS= -17A RDS(ON) 16m, at VGS= -4.5V, IDS= -14A  Continuous Drain Current at TC=25℃ ID = -61A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Applications  Load Switch  Power Management  LCD Display inverter  DC/DC Converter Description The CTH6106PS-T52 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .