CT Micro CTL015NS10-R3
The CTL015NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. The power dissipation is limited by 150 junction temperature.| Part No. | CTL015NS10-R3 |
|---|---|
| Datasheet | CTL015NS10-R3 Download |
| Manufacturer |  CT Micro |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Drain-Source Breakdown Voltage VDSS 105 V● Drain-Source On-Resistance RDS(ON) 230mΩ, at VGS= 10V, ID= 1.5A RDS(ON) 275mΩ, at VGS= 4.5V, ID= 1.0A ℃● Continuous Drain Current at TA=25 ID =1.5A
● Advanced high cell density Trench Technology
● RoHS Compliance & Halogen Free
DESCRIPTION
APPLICATIONS
● Power Management● LCD Display inverter
● DC/DC Converter
● Load Switch Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 1 Jun, 2015 CTL015NS10-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA4 Thermal Resistance Junction-Ambient (t=10s) Test Conditions Test Conditions 105 ±20 1.5 6 1.3 -55 to 150 -55 to 150 Min Notes V V A1 A1 W2 °...
