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CTL0262PS-R3 - P-Channel MOSFET

General Description

The CTL0262PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • Drain-Source Breakdown Voltage VDSS -20 V.
  • Drain-Source On-Resistance RDS(ON) 76m, at VGS= -4.5V, ID= -3.4A RDS(ON) 97m, at VGS= -2.5V, ID= -2.4A RDS(ON) 140m, at VGS= -1.8V, ID= -1.7A.
  • Continuous Drain Current at TC=25℃ID = -3.4A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CTL0262PS-R3
Manufacturer CT Micro
File Size 907.25 KB
Description P-Channel MOSFET
Datasheet download datasheet CTL0262PS-R3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CTL0262PS-R3 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -20 V  Drain-Source On-Resistance RDS(ON) 76m, at VGS= -4.5V, ID= -3.4A RDS(ON) 97m, at VGS= -2.5V, ID= -2.4A RDS(ON) 140m, at VGS= -1.8V, ID= -1.7A  Continuous Drain Current at TC=25℃ID = -3.4A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTL0262PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management .