Datasheet4U Logo Datasheet4U.com

CTL0266NS-R3 - N-Channel MOSFET

General Description

The CTL0266NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • Drain-Source Breakdown Voltage VDSS -20 V.
  • Drain-Source On-Resistance RDS(ON) 82m, at VGS= 10V, ID= 2.6A RDS(ON) 96m, at VGS= 4.5V, ID= 2.1A.
  • Continuous Drain Current at TC=25℃ID = 2.6A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

📥 Download Datasheet

Datasheet Details

Part number CTL0266NS-R3
Manufacturer CT Micro
File Size 1.05 MB
Description N-Channel MOSFET
Datasheet download datasheet CTL0266NS-R3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CTL005 AVERAGE RESPONDING AC CURRENT TRANSDUCERS Red Lion
CTL050 AVERAGE RESPONDING AC CURRENT TRANSDUCERS Red Lion
CTL-10-S50-30F-CL Clamp-on type AC Current Sensor PRC Technologies
CTL-12-S30-2.5Z AC Current Sensor URD
CTL-12-S36-10 AC Current Sensor URD

Other Datasheets by CT Micro

Part Number Description
CTL0262PS-R3 P-Channel MOSFET
CTL0203PS-R3 P-Channel MOSFET
CTL0212PS-R3 P-Channel MOSFET
CTL0015PS-R3 P-Channel MOSFET
CTL0025NS-R3 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CTL0266NS-R3 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -20 V  Drain-Source On-Resistance RDS(ON) 82m, at VGS= 10V, ID= 2.6A RDS(ON) 96m, at VGS= 4.5V, ID= 2.1A  Continuous Drain Current at TC=25℃ID = 2.6A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Applications  Power Management  Lithium Ion Battery Description The CTL0266NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.