CT Micro CTL0322PS-R3
The CTL0322PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. The power dissipation is limited by 150 junction temperature.| Part No. | CTL0322PS-R3 |
|---|---|
| Datasheet | CTL0322PS-R3 Download |
| Manufacturer |  CT Micro |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Drain-Source Breakdown Voltage VDSS -20 V● Drain-Source On-Resistance RDS(ON) 55mΩ, at VGS= -4.5V, ID= -3.2A RDS(ON) 70mΩ, at VGS= -2.5V, ID= -2.4A RDS(ON) 100mΩ, at VGS= -1.8V, ID= -1.7A ℃● Continuous Drain Current at TA=25 ID = -3.2A
● Advanced high cell density Trench Technology
● RoHS Compliance & Halogen Free
DESCRIPTION
APPLICATIONS
● Power Management● Lithium Ion Battery
● High-Side Switching Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CTL0322PS-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current PD Total Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA4 Thermal Resistance Junction-Ambient (t=10s) Test Conditions Test Conditions -20 ±12 -3.2 -10 1.4 -55 to 150 -55 to...
