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CTL0382PS - P-Channel MOSFET

General Description

The CTL0382PS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .

Key Features

  • Drain-Source Breakdown Voltage VDSS - 20 V.
  • Drain-Source On-Resistance RDS(ON) 42m, at VGS= - 4.5V, IDS= - 3.8A RDS(ON) 57m, at VGS= - 2.5V, IDS= - 3.0A.
  • Continuous Drain Current at TC=25℃ ID = - 3.8A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CTL0382PS
Manufacturer CT Micro
File Size 780.36 KB
Description P-Channel MOSFET
Datasheet download datasheet CTL0382PS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CTL0382PS P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS - 20 V  Drain-Source On-Resistance RDS(ON) 42m, at VGS= - 4.5V, IDS= - 3.8A RDS(ON) 57m, at VGS= - 2.5V, IDS= - 3.0A  Continuous Drain Current at TC=25℃ ID = - 3.8A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Applications  Power Management  Lithium Ion Battery Description The CTL0382PS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .