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CTL0412ND - N-Channel MOSFET

General Description

The CTL0412ND uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications tions.

Power Management Lithium Ion Battery Package Outline Schematic Pin 1 Pin 2 Gate 1 So

Key Features

  • Drain-Source Breakdown Voltage VDSS 20 V.
  • Drain-Source On-Resistance RDS(ON) 22m, at VGS= 4.5V, ID= 4.1A RDS(ON) 27m, at VGS= 2.5V, ID= 3.8A.
  • Continuous Drain Current at TC=25℃ID = 4.1A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CTL0412ND
Manufacturer CT Micro
File Size 1.02 MB
Description N-Channel MOSFET
Datasheet download datasheet CTL0412ND Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CTL0412ND N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 20 V  Drain-Source On-Resistance RDS(ON) 22m, at VGS= 4.5V, ID= 4.1A RDS(ON) 27m, at VGS= 2.5V, ID= 3.8A  Continuous Drain Current at TC=25℃ID = 4.1A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTL0412ND uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications tions.