CTL0452NS - N-Channel MOSFET

CT Micro

General Description

The CTL0452NS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .

Key Features

Drain-Source Breakdown Voltage VDSS 20 V.
Drain-Source On-Resistance RDS(ON) 22m, at VGS= 4.5V, IDS= 4.5A RDS(ON) 27m, at VGS= 2.5V, IDS= 4.0A.
Continuous Drain Current at TC=25℃ ID = 4.5A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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CTL0452NS n-channel mosfet by CT Micro - Datasheet Preview

Datasheet Details

Part number	CTL0452NS
Manufacturer	CT Micro
File Size	813.53 KB
Description	N-Channel MOSFET
Datasheet	CTL0452NS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CTL0452NS N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 20 V  Drain-Source On-Resistance RDS(ON) 22m, at VGS= 4.5V, IDS= 4.5A RDS(ON) 27m, at VGS= 2.5V, IDS= 4.0A  Continuous Drain Current at TC=25℃ ID = 4.5A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Applications  Power Management  Lithium Ion Battery Description The CTL0452NS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .