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CTL0642NS-R3 - N-Channel MOSFET

General Description

The CTL0642NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • Drain-Source Breakdown Voltage VDSS 20 V.
  • Drain-Source On-Resistance RDS(ON) 17mΩ, at VGS= 4.5V, IDS= 6.4A RDS(ON) 20mΩ, at VGS= 2.5V, IDS= 5.5A RDS(ON) 25mΩ, at VGS= 1.8V, IDS= 5.0A ℃.
  • Continuous Drain Current at TA=25 ID = 6.4A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.
  • ESD protection.

📥 Download Datasheet

Datasheet Details

Part number CTL0642NS-R3
Manufacturer CT Micro
File Size 1.96 MB
Description N-Channel MOSFET
Datasheet download datasheet CTL0642NS-R3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CTL0642NS-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 20 V • Drain-Source On-Resistance RDS(ON) 17mΩ, at VGS= 4.5V, IDS= 6.4A RDS(ON) 20mΩ, at VGS= 2.5V, IDS= 5.5A RDS(ON) 25mΩ, at VGS= 1.8V, IDS= 5.0A ℃• Continuous Drain Current at TA=25 ID = 6.4A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free • ESD protection Applications • Power Management • Battery Powered System • Portable Equipment • DC/DC Converter Package Outline Description The CTL0642NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.