CT Micro CTL0642NS-R3
The CTL0642NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. The power dissipation is limited by 150 junction temperature.| Part No. | CTL0642NS-R3 |
|---|---|
| Datasheet | CTL0642NS-R3 Download |
| Manufacturer |  CT Micro |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Drain-Source Breakdown Voltage VDSS 20 V● Drain-Source On-Resistance RDS(ON) 17mΩ, at VGS= 4.5V, IDS= 6.4A RDS(ON) 20mΩ, at VGS= 2.5V, IDS= 5.5A RDS(ON) 25mΩ, at VGS= 1.8V, IDS= 5.0A ℃● Continuous Drain Current at TA=25 ID = 6.4A
● Advanced high cell density Trench Technology
● RoHS Compliance & Halogen Free
● ESD protection
APPLICATIONS
● Power Management● Battery Powered System
● Portable Equipment
● DC/DC Converter Package Outline
DESCRIPTION
Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTL0642NS-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s) Test Conditions Ratings 20 ±8 6.4...
