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CTL190NS10-T52 - N-Channel MOSFET

General Description

The CTL190NS10-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

Key Features

  • Drain-Source Breakdown Voltage VDSS 100V.
  • Drain-Source On-Resistance RDS(ON) 65m, at VGS= 10V, ID= 12A RDS(ON) 75m, at VGS= 5V, ID= 12A.
  • Continuous Drain Current at TC=25℃ID =19A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CTL190NS10-T52
Manufacturer CT Micro
File Size 1.03 MB
Description N-Channel MOSFET
Datasheet download datasheet CTL190NS10-T52 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CTL190NS10-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 100V  Drain-Source On-Resistance RDS(ON) 65m, at VGS= 10V, ID= 12A RDS(ON) 75m, at VGS= 5V, ID= 12A  Continuous Drain Current at TC=25℃ID =19A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTL190NS10-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.