CTL190NS10-T52 - N-Channel MOSFET

CT Micro

CTL190NS10-T52 Datasheet Preview — Preview of CTL190NS10-T52 PDF

Datasheet Details

Part number	CTL190NS10-T52
Manufacturer	CT Micro
File Size	1.03 MB
Description	N-Channel MOSFET
Datasheet	CTL190NS10-T52-CTMicro.pdf

CTL190NS10-T52 Product details

Description

The CTL190NS10-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. DC/DC Converter Load Switch LCD Display inverter Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev

Features

Drain-Source Breakdown Voltage VDSS 100V.
Drain-Source On-Resistance RDS(ON) 65m, at VGS= 10V, ID= 12A RDS(ON) 75m, at VGS= 5V, ID= 12A.
Continuous Drain Current at TC=25℃ID =19A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |