CTL550NS08-T52 - N-Channel MOSFET

Product Overview

CT Micro

Datasheet Details

Part number	CTL550NS08-T52
Manufacturer	CT Micro
File Size	1.02 MB
Description	N-Channel MOSFET
Datasheet	CTL550NS08-T52 Datasheet
Additional preview pages of the CTL550NS08-T52 datasheet.

Product details

Description

The CTL550NS08-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

Features

Drain-Source Breakdown Voltage VDSS 80V.
Drain-Source On-Resistance RDS(ON) 11m, at VGS= 10V, ID= 40A.
Continuous Drain Current at TC=25℃ID =55A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |