CTL550NS08-T52
Features
- Drain-Source Breakdown Voltage VDSS 80V
- Drain-Source On-Resistance
RDS(ON) 11m, at VGS= 10V, ID= 40A
- Continuous Drain Current at TC=25℃ID =55A
- Advanced high cell density Trench Technology
- Ro HS pliance & Halogen Free
Description
The CTL550NS08-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.
Applications
- DC/DC Converter
- Load Switch
- Power Management
Package Outline
Schematic
Drain
Gate
Source
Drain Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 2 Jun, 2015
CTL550NS08-T52 N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25o C
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TC=25℃
IDM Pulsed Drain Current
PD Total Power Dissipation...
