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CT Micro

H11A1 Datasheet Preview

H11A1 Datasheet

Phototransistor Optocoupler

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4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38
H11A1, H11A2, H11A3, H11A4, H11A5
DC Input 6-Pin Phototransistor Optocoupler
Features
High isolation 5000 VRMS
CTR flexibility available see order information
DC input with transistor output
Operating temperature range - 55 °C to 110 °C
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC GB4943.1, GB8898
IEC60065, IEC60950
Applications
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Description
The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37,
4N38, H11A1, H11A2, H11A3, H11A4, H11A5 series
consists of a photo transistor optically coupled to a
gallium arsenide Infrared-emitting diode in a 6-lead
DIP package different lead forming options.
Package Outline
Schematic
Note: Different bending options available. See package
dimension.
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Apr, 2016




CT Micro

H11A1 Datasheet Preview

H11A1 Datasheet

Phototransistor Optocoupler

No Preview Available !

4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38
H11A1, H11A2, H11A3, H11A4, H11A5
DC Input 6-Pin Phototransistor Optocoupler
Absolute Maximum Rating at 25oC
Symbol
Parameters
VISO Isolation voltage
TOPR Operating temperature
TSTG Storage temperature
TSOL Soldering temperature
Emitter
IF
IF(TRANS)
Forward current
Peak transient current (≤1μs P.W,300pps)
VR Reverse voltage
PD Power dissipation
Detector
PD Power dissipation
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVECO Emitter-Collector Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
Ratings
5000
-55 ~ +110
-55 ~ +150
260
60
1
6
100
150
80
80
7
7
Units
VRMS
oC
oC
oC
Notes
mA
A
V
mW
mW
V
V
V
V
CT Micro
Proprietary & Confidential
Page 2
Rev 2
Apr, 2016


Part Number H11A1
Description Phototransistor Optocoupler
Maker CT Micro
Total Page 14 Pages
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