Datasheet4U Logo Datasheet4U.com

H11B3 - Photodarlington Optocoupler

Download the H11B3 datasheet PDF. This datasheet also covers the H11B1 variant, as both devices belong to the same photodarlington optocoupler family and are provided as variant models within a single manufacturer datasheet.

General Description

The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option.

Key Features

  • High isolation 5000 VRMS.
  • CTR flexibility available see order information.
  • DC input with transistor output.
  • Temperature range - 55 °C to 100 °C.
  • Regulatory Approvals.
  • UL - UL1577 (E364000).
  • VDE - EN60747-5-5(VDE0884-5).
  • CQC.
  • GB4943.1, GB8898.
  • IEC60065, IEC60950.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H11B1-CTMicro.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H11B3
Manufacturer CT Micro
File Size 1.17 MB
Description Photodarlington Optocoupler
Datasheet download datasheet H11B3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Features  High isolation 5000 VRMS  CTR flexibility available see order information  DC input with transistor output  Temperature range - 55 °C to 100 °C  Regulatory Approvals  UL - UL1577 (E364000)  VDE - EN60747-5-5(VDE0884-5)  CQC – GB4943.1, GB8898  IEC60065, IEC60950 Applications  Switch mode power supplies  Computer peripheral interface  Microprocessor system interface Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option.