HIRP2406W14-B10
SMD Type 850nm Infrared Emitter
Absolute Maximum Rating at 250C
Symbol
Parameters
IF Continuous Forward Current
IFP Peak Forward Current
VR Reverse Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
PD Power Dissipation at(or below) 25℃ Free Air Temperature
RTHJA Junction to Ambient Thermal Resistance
Ratings
70
0.7
5
-40 ~ +85
-40 ~ +100
260
140
540
Units
mA
A
V
0C
0C
0C
mW
0C/W
Notes
1
2
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters
Ie Radiant Intensity
λp Peak Wavelength
Δλ Spectral Bandwidth
θ1/2
Angle of Half Intensity (X)
Angle of Half Intensity (Y)
Test Conditions
IF=20mA
IF =70mA
IF=20mA
IF=20mA
IF=20mA
Min Typ Max Units Notes
2.50 4.0
- 13.5
-
mW/sr
-
- 850 - nm
- 30 - nm
- 55.0 -
deg 3
- 25.0 -
Electrical Characteristics
Symbol
Parameters
VF Forward Voltage
IR Reverse Current
Test Conditions
IF=20mA
IF=70mA
VR=5V
Notes:
1 : IFP Conditions--Pulse Width≦ 100μs and Duty≦ 1%.
2 : Soldering time≦5 seconds.
3 : Test condition :
Min Typ Max Units Notes
1.30 1.49
1.40 1.67
--
1.7
2.0
10
V
μA
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Apr, 2018
