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CT Micro

IRP3016W24-G0 Datasheet Preview

IRP3016W24-G0 Datasheet

Infrared Emitter

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IRP3016W24-G0
SMD Type 940nm Infrared Emitter
Features
Small double-end package
Viewing Angle = 300
High reliability
Good spectral matching to Si photo detector
RoHS compliance
Applications
Infrared sensor
Infrared Touch Panel Solutions
Description
The IRP3016W24-G0 is a GaAlAs infrared LED
housed in a miniature SMD package. The device
has a peak wavelength of 940nm LED spectrally
matched with phototransistor or photodiode.
Package Outline
Schematic
Cathode
Anode
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jul, 2016




CT Micro

IRP3016W24-G0 Datasheet Preview

IRP3016W24-G0 Datasheet

Infrared Emitter

No Preview Available !

IRP3016W24-G0
SMD Type 940nm Infrared Emitter
Absolute Maximum Rating at 250C
Symbol
Parameters
IF Continuous Forward Current
IFP Peak Forward Current
VR Reverse Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
PD Power Dissipation at(or below) 25Free Air Temperature
RTHJA Junction to Ambient Thermal Resistance
Ratings
70
0.7
5
-40 ~ +85
-40 ~ +100
260
133
540
Units
mA
A
V
0C
0C
0C
mW
0C/W
Notes
1
2
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters
Ie Radiant Intensity
λp
Δλ
θ1/2
Peak Wavelength
Spectral Bandwidth
Angle of Half Intensity
Test Conditions
IF=20mA
IF =70mA
IF=20mA
IF=20mA
IF=20mA
Min Typ Max Units Notes
5.5 6.4 10.5
3
mW/sr
- 22 -
- 940 - nm
- 30 - nm
- 30 - deg
Electrical Characteristics
Symbol
Parameters
VF Forward Voltage
IR Reverse Current
Test Conditions
IF=20mA
IF=70mA
VR=5V
Notes:
1. IFP Conditions--Pulse Width100μs and Duty1%.
2. Soldering time5 seconds.
3. Ie Bin Rank : (Tolerance of Radiant Intensity:±10%)
Bin Code
Gd
Hd
Min 5.5 7.5
Max 7.5 10.5
CT Micro
Proprietary & Confidential
Page 2
Min Typ Max Units Notes
1.1 1.30 1.6
1.2 1.37 1.9
- - 10
V
μA
Rev 3
Jul, 2016


Part Number IRP3016W24-G0
Description Infrared Emitter
Maker CT Micro
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IRP3016W24-G0 Datasheet PDF






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