Datasheet Details
| Part number | PTC93528T19 |
|---|---|
| Manufacturer | CT Micro |
| File Size | 870.80 KB |
| Description | Phototransistor |
| Datasheet |
 PTC93528T19 Datasheet
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| Part number | PTC93528T19 |
|---|---|
| Manufacturer | CT Micro |
| File Size | 870.80 KB |
| Description | Phototransistor |
| Datasheet |
PTC93528T19 Datasheet
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The PTC93528T19 is silicon NPN Phototransistor The device has wide spectral sensitivity range from 400 to 1100nm.
Package Outline Schematic Collector Emitter CT Micro Proprietary & Confidential Page 1 Rev 0 (Preliminary) Jul, 2015 PTC93528T19 SMD Type Phototransistor Absolute Maximum Rating at 250C Symbol Parameters IC Collector Current BVCEO Collector-Emitter Voltage BVECO Emitter-Collector Voltage Topr Operating Temperature Tstg Storage Temperature Tsol Soldering Temperature Pto Total Power Dissipation Optical Characteristics Symbol Parameters Spectral Bandwidth P Peak Sensitivity θ1/2 View Angle Test Conditions - VCE=5V Electrical Characteristics Symbol Parameters ICEO Dark Current VCE(sat) Collector-Emitter Saturation Voltage IC Collector Light Current CT Terminal Capacitance Test Conditions Ee=0mW /cm2 VCE=20V Ee=1mW /cm2 IC=1.0mA Ee=1mW /cm2 P=940nm, VCE=5V Ee=0mW /cm2 f=1MHz ,VCE=5V Ratings 20 35 5 -40 ~ +85 -40 ~ +100 260 150 Units mA V V 0C 0C 0C mW Notes 1 2 3 Min Typ Max Units Notes 400 - 1100 nm - 940 - nm - 50 - deg Min Typ Max Units Notes - - 100 nA - - 0.4 V 1.4 1.9 - mA - 4.4 - pF CT Micro Proprietary & Confidential Page 2 Rev 0 (Preliminary) Jul, 2015 PTC93528T19 SMD Type Phototransistor Switching Characteristics Symbol Parameters tr Rise Time tf Fall Time ton Turn on Delay Time toff Turn off Delay Time Test Conditions Vce = 5V, RL = 100Ω IC=1.0mA Min Typ Max Units Notes -5- -6µs 4 - 5.5 - - 7.5 - Notes: 1 : Test conditions : IC=100μA, Ee=0mW/cm2.
2 : Test conditions : IE=100μA, Ee=0mW/cm2.
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