* High breakdown voltage, BVCEO≥ 60V
* Large continuous collector current capability
* Low collector saturation voltage
* Pb-free lead plating and halogen-free package Symbol BTB1116AN3 Outline C SOT-23 B：Base C：Collector E：Emitter E B Ordering Information Devi
BTB1116AN3 Datasheet (320.97 KB)
BTB1116AN3
CYStech
320.97 KB
Pnp transistor.
CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTB1116AN3 BVCEO IC Spec. No. : C626N3 Issued Date : 2018.02.14 Revised.
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