High BVCEO
High current capability
Complementary to BTB1236AJ3G
RoHS compliant and Halogen-free package
Symbol
BTD1857AJ3G
Outline
TO-252AB
TO-252AA
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collecto
Full PDF Text Transcription for BTD1857AJ3G (Reference)
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BTD1857AJ3G. For precise diagrams, and layout, please refer to the original PDF.
CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AJ3G BVCEO IC RCESAT Spec. No. : C855J3G Issued Date : 2004.10.04 Revised Date :2010.12.08 Page N...
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No. : C855J3G Issued Date : 2004.10.04 Revised Date :2010.12.08 Page No. : 1/7 160V 1.5A 310mΩ Description • High BVCEO • High current capability • Complementary to BTB1236AJ3G • RoHS compliant and Halogen-free package Symbol BTD1857AJ3G Outline TO-252AB TO-252AA B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg BTD1857AJ3G BCE B CE Limits 180 160 5 1.
BTD1857AJ3G Datasheet
