High BVCEO
High current capability
Pb-free package
Symbol
BTD1858T3
Outline
TO-126
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector C
Full PDF Text Transcription for BTD1858T3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BTD1858T3. For precise diagrams, and layout, please refer to the original PDF.
CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1858T3 Spec. No. : C856T3 Issued Date : 2007.03.20 Revised Date : Page No. : 1/7 Description • High B...
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d Date : 2007.03.20 Revised Date : Page No. : 1/7 Description • High BVCEO • High current capability • Pb-free package Symbol BTD1858T3 Outline TO-126 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Single Pulse , Pw≦380μs,Duty≦2%. BTD1858T3 Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 18
BTD1858T3 Datasheet
