BTD2114N3 transistor equivalent, high current gain medium power npn epitaxial planar transistor.
* High Emitter-Base voltage, VEBO=12V(min).
* High DC current gain, hFE=1200(min.) @VCE=3V, IC=10mA.
* Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA.
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