BTD2114N3 Datasheet High Current Gain Medium Power NPN Epitaxial Planar Transistor

Manufacturer: CYStech

Overview: CYStech Electronics Corp. Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : 2017.12.05 Page No. : 1/8 High Current Gain Medium Power NPN Epitaxial Planar Transistor AUDIO MUTING APPLICATION BTD2114N3 BVCEO IC 20V 500mA RCE(SAT) 0.

Datasheet Details

Part number	BTD2114N3
Manufacturer	CYStech
File Size	355.75 KB
Description	High Current Gain Medium Power NPN Epitaxial Planar Transistor
Datasheet	BTD2114N3-CYStech.pdf

Key Features

High Emitter-Base voltage, VEBO=12V(min).
High DC current gain, hFE=1200(min. ) @VCE=3V, IC=10mA.
Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA.
Pb-free and halogen-free package. Symbol BTD2114N3 Outline SOT-23 C B：Base C：Collector E：Emitter E B Ordering Information Device BTD2114N3-0-T1-G Package Shipping SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products,.

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