Part BTD2114N3
Description High Current Gain Medium Power NPN Epitaxial Planar Transistor
Category Transistor
Manufacturer CYStech
Size 355.75 KB
CYStech

BTD2114N3 Overview

Key Features

  • High Emitter-Base voltage, VEBO=12V(min)
  • High DC current gain, hFE=1200(min.) @VCE=3V, IC=10mA
  • Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA
  • Pb-free and halogen-free package. Symbol BTD2114N3 Outline SOT-23 C B:Base C:Collector E:Emitter E B