* High Emitter-Base voltage, VEBO=12V(min).
* High DC current gain, hFE=1200(min.) @VCE=3V, IC=10mA.
* Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA.
* Pb-free and halogen-free package. Symbol BTD2114N3 Outline SOT-23 C B：Base C：Collector E：Emitter E B Order
BTD2114N3 Datasheet (355.75 KB)
BTD2114N3
CYStech
355.75 KB
High current gain medium power npn epitaxial planar transistor.
CYStech Electronics Corp. Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : 2017.12.05 Page No. : 1/8 High Current Gain Medium Power NPN Ep.
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