BTD2150K3 - Low Vcesat NPN Epitaxial Planar Transistor

Features

• Low VCE(sat), VCE(sat)=0.14 V (typical), at IC / IB = 1A / 10mA.
• Excellent current gain characteristics.
• Complementary to BTB1424K3.
• Pb-free lead plating package Symbol BTD2150K3 Outline TO-92L B：Base C：Collector E：Emitter Ordering Information Device BTD2150K3-0-TB-G BTD2150K3-0-BM-G Package TO-92L (Pb-free lead plating and halogen-free package) TO-92L (Pb-free lead plating and halogen-free package) Shipping 2000 pcs / tape & box 500 pcs / bag, 10 bags/box, 10 boxes/.