BTD2498N3 Datasheet - CYStech

High Voltage NPN Epitaxial Planar Transistor

BTD2498N3 General Description

* High breakdown voltage. (BVCEO=400V) * Low saturation voltage, typical VCE(sat) =0.13V at Ic/IB =20mA/1mA. * Complementary to BTB1498N3 * Pb-free package Equivalent Circuit BTD2498N3 Outline SOT-23 B : Base C : Collector E : Emitter Absolute Maximum Ratings (Ta.

BTD2498N3 Datasheet (259.47 KB)

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BTD2498N3

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CYStech

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259.47 KB

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High voltage npn epitaxial planar transistor.
CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor Built-in Base Resistor BTD2498N3 Spec. No. : C899N3 Issued Date : 2009.12.23 R.

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BTD2498N3 General Description

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