* Low VCE(SAT)
* Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A
* Low operating collector voltage
* Excellent current gain characteristics at very low VCE
* Suitable for low dropout voltage application
* Pb-free package Symbol BTD6055J3 Outline TO-
BTD6055J3 Datasheet (235.38 KB)
BTD6055J3
CYStech
235.38 KB
Low vcesat npn epitaxial planar transistor.
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD6055J3 Spec. No. : C659J3 Issued Date : 2008.06.25 Revised Date : Page No. : .
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