BTP9050N3 Description
High breakdown voltage. (BVCEO=-500V) Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA. S for RoHS pliant products, G for RoHS pliant and green pound products Packing spec, T1.
BTP9050N3 is High Voltage PNP Epitaxial Planar Transistor manufactured by CYStech.
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High breakdown voltage. (BVCEO=-500V) Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA. S for RoHS pliant products, G for RoHS pliant and green pound products Packing spec, T1.