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CYStech Electronics Corp.
PNP Epitaxial Planar Transistor
BTPA56N3
Spec. No. : C217N3 Issued Date : 2013.06.26 Revised Date : Page No. : 1/8
Features
• Low VCE(sat), VCE(sat)=-0.07 V (typ), at IC / IB = -100mA / -10mA • Excellent current gain characteristics • Pb-free lead plating and halogen-free package
Symbol
BTPA56N3
Outline
SOT-23
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation
Power Dissipation Operating Junction and Storage Temperature Range
Symbol VCBO VCEO VEBO
IC ICP IB
PD
Tj ; Tstg
Limits
-80 -80 -5 -500 -1 (Note 1) -200
0.225
0.
BTPA56N3 Datasheet
