• Part: BTPA56N3
  • Description: PNP Transistor
  • Category: Transistor
  • Manufacturer: CYStech
  • Size: 277.85 KB
Download BTPA56N3 Datasheet PDF
CYStech
BTPA56N3
BTPA56N3 is PNP Transistor manufactured by CYStech.
Features - Low VCE(sat), VCE(sat)=-0.07 V (typ), at IC / IB = -100m A / -10m A - Excellent current gain characteristics - Pb-free lead plating and halogen-free package Symbol Outline SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation Power Dissipation Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP IB Tj ; Tstg Limits -80 -80 -5 -500 -1 (Note 1) -200 0.35 (Note 2) -65~+150 Unit V m A A m A °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C217N3 Issued Date : 2013.06.26 Revised Date : Page No. : 2/8 Thermal Data Parameter Thermal Resistance, Junction-to-ambient, max Thermal Resistance, Junction-to-ambient, max (Note 2) Note : 1. Single Pulse , Pw=300μs, duty cycle≤2%. 2. Device mounted on FR-4 board 1.6” ×1.6” ×0.06” . Symbol Rth,j-a Rth,j-a Value 556 Unit °C/W °C/W Characteristics (Ta=25°C) Symbol BVCBO BVCEO...