DAN212N3 - High-speed switching diode

CYStech

General Description

The DAN212N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT-23 plastic SMD package.

Key Features

Small plastic SMD package.
High switching speed: max. 4ns.
Continuous reverse voltage: max. 100V.
Repetitive peak reverse voltage: max. 110V.
Repetitive peak forward current: max. 500mA.

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DAN212N3 high-speed switching diode by CYStech - Datasheet Preview

Datasheet Details

Part number	DAN212N3
Manufacturer	CYStech
File Size	241.41 KB
Description	High-speed switching diode
Datasheet	DAN212N3 Datasheet

Other Datasheets by CYStech

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. High –speed switching diode DAN212N3 Spec. No. : C303N3R Issued Date : 2003.04.12 Revised Date : 2010.10.21 Page No. : 1/6 Description The DAN212N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT-23 plastic SMD package. Equivalent Circuit Outline DAN212N3 21 3 1：Anode 2：Not Connected 3：Cathode SOT-23 Cathode Anode NC Features • Small plastic SMD package • High switching speed: max. 4ns • Continuous reverse voltage: max. 100V • Repetitive peak reverse voltage: max. 110V • Repetitive peak forward current: max. 500mA. Applications • High-speed switching in thick and thin-film circuits.