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CYStech

MTA9D0P03V8 Datasheet Preview

MTA9D0P03V8 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTA9D0P03V8
Spec. No. : C050V8
Issued Date : 2019.01.22
Revised Date :
Page No. : 1/9
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating package
BVDSS
ID@ TC=25C, VGS=-10V
ID@ TA=25C, VGS=-10V
RDSON @VGS=-10V, ID=-12A
RDSON @VGS=-4.5V, ID=-10A
RDSON @VGS=-3V, ID=-5A
-30V
-44A
-11.6A
8.9 mΩ(typ.)
11.8mΩ(typ.)
20.4 mΩ(typ.)
Equivalent Circuit
MTA9D0P03V8
Outline
DFN3×3
GGate SSource DDrain
Pin 1
Ordering Information
Device
MTA9D0P03V8-0-T6-G
Package
Shipping
DFN3×3
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTA9D0P03V8
CYStek Product Specification




CYStech

MTA9D0P03V8 Datasheet Preview

MTA9D0P03V8 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C050V8
Issued Date : 2019.01.22
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25C, VGS=-10V
Continuous Drain Current @ TC=70C, VGS=-10V
Continuous Drain Current @ TA=25C, VGS=-10V
Continuous Drain Current @ TA=70C, VGS=-10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=-16A, VDD=-15V
Repetitive Avalanche Energy @ L=0.05mH
TC=25
TC=100
Total Power Dissipation TA=25
TA=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
-30
±12
-44
-27.8
-11.6
-9.3
-176 *1
-36
128 *4
3.6 *2
36
14
2.5 *3
1.6 *3
-55~+150
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
RθJC
RθJA
3.5
50 *3
C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in²copper pad of FR-4 board, t10s ; 125C/W when mounted on minimum copper pad.
4. 100% tested by conditions of L=0.1mH, IAS=-10A, VGS=-10V, VDD=-15V
Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
-30
-0.8
-
-
-
-1.6
V
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
IGSS
-
-
±100
nA VGS=±12V, VDS=0V
IDSS
-
-
-
-
-1
-10
μA
VDS=-24V, VGS=0V
VDS=-24V, VGS=0V, Tj=125C
- 8.9 12.8
VGS=-10V, ID=-12A
RDS(ON) *1
- 11.8 16.5 mVGS=-4.5V, ID=-10A
- 20.4 45
VGS=-3V, ID=-5A
GFS *1
- 13.9 -
S VDS=-5V, ID=-3A
MTA9D0P03V8
CYStek Product Specification


Part Number MTA9D0P03V8
Description P-Channel Enhancement Mode Power MOSFET
Maker CYStech
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