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MTA9D0P03V8 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating package BVDSS ID@ TC=25C, VGS=-10V ID@ TA=25C, VGS=-10V RDSON @VGS=-10V, ID=-12A RDSON @VGS=-4.5V, ID=-10A RDSON @VGS=-3V, ID=-5A -30V -44A -11.6A 8.9 mΩ(typ. ) 11.8mΩ(typ. ) 20.4 mΩ(typ. ) Equivalent Circuit MTA9D0P03V8 Outline DFN3×3 G：Gate S：Source D：Drain Pin 1 Ordering Information Device MTA9D0P03V8-0-T6-G Package Shipping DFN3×3 (Pb-free lead plating and h.

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Datasheet Details

Part number MTA9D0P03V8
Manufacturer CYStech
File Size 756.44 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTA9D0P03V8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTA9D0P03V8 Spec. No. : C050V8 Issued Date : 2019.01.22 Revised Date : Page No. : 1/9 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package BVDSS ID@ TC=25C, VGS=-10V ID@ TA=25C, VGS=-10V RDSON @VGS=-10V, ID=-12A RDSON @VGS=-4.5V, ID=-10A RDSON @VGS=-3V, ID=-5A -30V -44A -11.6A 8.9 mΩ(typ.) 11.8mΩ(typ.) 20.4 mΩ(typ.