* VGS=10V, ID=20A RDSON(TYP) VGS=4.5V, ID=20A
* Simple Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package 60V 38A 10A 10mΩ 15.6mΩ Symbol MTB010N06RH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D
MTB010N06RH8 Datasheet (863.28 KB)
MTB010N06RH8
CYStech
863.28 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C016H8 Issued Date : 2019.04.08 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTB010.
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