MTB010N06RH8 Datasheet PDF (N-Channel Enhancement Mode Power MOSFET)

MTB010N06RH8 - N-Channel Enhancement Mode Power MOSFET

Features

VGS=10V, ID=20A RDSON(TYP) VGS=4.5V, ID=20A.
Simple Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Pb-free lead plating and Halogen-free package 60V 38A 10A 10mΩ 15.6mΩ Symbol MTB010N06RH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB010N06RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade.

Datasheet Details

Part number	MTB010N06RH8
Manufacturer	CYStech
File Size	863.28 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB010N06RH8 Datasheet

📁 Similar Datasheet

MTB010N06I3 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)

MTB011 - High Output Interface Driver ICs (Shindengen Electric)

MTB011N10RQ8 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB012N04J3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB012N04Q8 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB012N10RQ8 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB013N10RE3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB013N10RH8 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)

MTB013N10RJ3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB013N10RQ8 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)

Full PDF Text Transcription

Click to expand full text

CYStech Electronics Corp. Spec. No. : C016H8 Issued Date : 2019.04.08 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTB010N06RH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features VGS=10V, ID=20A RDSON(TYP) VGS=4.5V, ID=20A  Simple Drive Requirement  Low On-resistance  Fast Switching Characteristic  Pb-free lead plating and Halogen-free package 60V 38A 10A 10mΩ 15.

Published: Mar 11, 2020 |