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MTB010N06RI3 Datasheet Preview

MTB010N06RI3 Datasheet

N-Channel MOSFET

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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB010N06RI3
Spec. No. : C016J3
Issued Date : 2018.05.24
Revised Date :
Page No. : 1/ 8
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
60V
43A
10.7 mΩ(typ)
16.9 mΩ(typ)
Symbol
MTB010N06RI3
Outline
TO-251
GGate DDrain SSource
G DS
Ordering Information
Device
Package
Shipping
MTB010N06RI3-0-UA-G
TO-251
(Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UA: 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTB010N06RI3
CYStek Product Specification




CYStech

MTB010N06RI3 Datasheet Preview

MTB010N06RI3 Datasheet

N-Channel MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C016J3
Issued Date : 2018.05.24
Revised Date :
Page No. : 2/ 8
Absolute Maximum Ratings (TC=25C)
Parameter
Symbol
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25C, VGS=10V
(Note 4)
Continuous Drain Current @TA=70C, VGS=10V
(Note 4)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=0.1mH, ID=32A, VDD=30V
(Note 2&5)
Repetitive Avalanche Energy
(Note 3)
TC=25C
(Note 1)
Power Dissipation
TC=100C
TA=25C
(Note 1)
(Note 4)
TA=70C
(Note 4)
Operating Junction and Storage Temperature
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Limits
60
±20
43
30.4
9.8
7.8
172
32
51
5
50
25
3
0.96
-55~+175
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
3
50 (Note 4)
110
Unit
C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in
any given application depends on the users specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When the device is mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any
given application depends on the users specific board design.
5. 100% tested by conditions of L=0.1mH, VGS=10V, IAS=10A, VDD=30V
MTB010N06RI3
CYStek Product Specification


Part Number MTB010N06RI3
Description N-Channel MOSFET
Maker CYStech
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