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MTB020N10RH8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 100V 21A 6.8A 20.4mΩ(typ) 25.1mΩ(typ) Symbol MTB020N10RH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB020N10RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating an.

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Datasheet Details

Part number MTB020N10RH8
Manufacturer CYStech
File Size 811.02 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB020N10RH8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C053H8 Issued Date : 2019.08.29 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTB020N10RH8 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 100V 21A 6.8A 20.4mΩ(typ) 25.