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MTB020N10RH8 - N-Channel Enhancement Mode Power MOSFET

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CYStech

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MTB020N10RH8 N-Channel Enhancement Mode Power MOSFET by CYStech - Datasheet Preview — Datasheet preview – MTB020N10RH8

Datasheet Details

Part number	MTB020N10RH8
Manufacturer	CYStech
File Size	811.02 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB020N10RH8 Datasheet
Additional preview pages of the MTB020N10RH8 datasheet.

Product details

Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 100V 21A 6.8A 20.4mΩ(typ) 25.1mΩ(typ) Symbol MTB020N10RH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB020N10RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating an.

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Published: Mar 6, 2020 |