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CYStech

MTB060P06I3 Datasheet Preview

MTB060P06I3 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C796I3
Issued Date : 2019.03.25
Revised Date :
Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTB060P06I3 BVDSS
-60V
ID@ VGS=-10V, TC=25C -16.7A
RDSON@VGS=-10V, ID=-8A 57mΩ(typ.)
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating & Halogen-free package
RDSON@VGS=-4.5V, ID=-6A 63 mΩ(typ.)
Equivalent Circuit
MTB060P06I3
Outline
TO-251
GGate DDrain SSource
G DS
Ordering Information
Device
Package
Shipping
MTB060P06I3-0-UA-G
TO-251
(Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA: 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTB060P06I3
CYStek Product Specification




CYStech

MTB060P06I3 Datasheet Preview

MTB060P06I3 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C796I3
Issued Date : 2019.03.25
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=-10V, TC=25C
Continuous Drain Current @ VGS=-10V, TC=100C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-24A, RG=25Ω
Total Power Dissipation @TC=25
Total Power Dissipation @TC=100
VDS
VGS
-60
±20
-16.7
ID -10.6
IDM -57
IAS -24
EAS 28.8
36
PD
14.4
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
100% UIS testing in condition of VD=-15V, L=0.1mH, VG=-10V, IL=-6A, Rated VDS=-60V P-Channel
Unit
V
A
mJ
W
C
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Note : When mounted on the minimum pad size recommended (PCB mount).
Symbol
RθJC
RθJA
Value
3.5
50 (Note)
110
Unit
C/W
Characteristics (Tc=25C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
-60
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-2.5
V
VGS=0V, ID=-250μA
VDS =VGS, ID=-250μA
9 - S VDS =-10V, ID=-7A
-
±100
nA VGS=±20V, VDS=0V
- -1 μA VDS =-48V, VGS =0V
- -10
VDS =-48V, VGS =0V, Tj=125C
57
63
75
90
mΩ
VGS =-10V, ID=-8A
VGS =-4.5V, ID=-6A
27.1 -
3.8 - nC VDS=-48V, ID=-8A, VGS=-10V
5.2 -
5.8 -
7.2
140
-
-
ns VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω
91 -
MTB060P06I3
CYStek Product Specification


Part Number MTB060P06I3
Description P-Channel Enhancement Mode Power MOSFET
Maker CYStech
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