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MTB100A06KRH8 Datasheet Preview

MTB100A06KRH8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C666H8
Issued Date : 2019.12.13
Revised Date :
Page No. : 1/ 10
Dual N-Channel Enhancement Mode Power MOSFET
MTB100A06KRH8
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
ESD protected gate
Pb-free lead plating and Halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=2.2A
RDS(ON)@VGS=4.5V, ID=1.3A
RDS(ON)@VGS=3.3V, ID=1A
60V
11.3A
7.1A
3.2A
2.6A
82mΩ(typ)
116mΩ(typ)
183mΩ(typ)
Equivalent Circuit
MTB100A06KRH8
Outline
Pin 1
DFN5×6
Pin 1
GGate DDrain SSource
Ordering Information
Device
MTB100A06KRH8-0-T6-G
MTB100A06KRH8
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13reel
Product rank, zero for no rank products
Product name
CYStek Product Specification




CYStech

MTB100A06KRH8 Datasheet Preview

MTB100A06KRH8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C666H8
Issued Date : 2019.12.13
Revised Date :
Page No. : 2/ 10
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
Avalanche Current @ L=100μH
(Note 3)
(Note 3)
Single Pulse Avalanche Energy @ L=1mH, ID=3A, VDD=10V (Note 5)
Repetitive Avalanche Energy
(Note 3)
ESD susceptibility (Note 5)
TC=25C
(Note 1)
Power Dissipation
TC=100C
TA=25C
(Note 1)
(Note 2)
TA=70C
(Note 2)
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
VESD
PD
PDSM
Tj, Tstg
Limits
60
±20
11.3
7.1
3.2
2.6
30
4
4.5
0.05
1000
25
10
2
1.3
-55~+150
Unit
V
A
mJ
V
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 4)
Symbol
RθJC
RθJA
Value
5
62.5
Unit
C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The value in any given application depends on the users specific board design. The
power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.
3. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C.
4. When mounted on1 in²copper pad of FR-4 board ; 125C/W when mounted on minimum copper pad.
5. Human body model, 1.5kΩ in series with 100pF
Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
60 -
- V VGS=0V, ID=250μA
BVDSS/Tj - 0.04 - V/C Reference to 25C, ID=250μA
VGS(th)
1.0 - 2.5 V VDS = VGS, ID=250μA
*GFS
IGSS
IDSS
- 1.9 -
S VDS =5V, ID=1A
- - ±10
VGS=±16V, VDS=0V
- - 1 μA VDS =48V, VGS =0V
- - 25
VDS =48V, VGS =0V, Tj=85C
MTB100A06KRH8
CYStek Product Specification


Part Number MTB100A06KRH8
Description Dual N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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