MTB20N04J3 - N-Channel Enhancement Mode Power MOSFET
CYStech
Key Features
RDSON(TYP)
VGS=10V, ID=10A VGS=4.5V, ID=8A.
Low Gate Charge.
Simple Drive Requirement.
Pb-free lead plating package
40V 23A 16.3A 17.5mΩ 20.8mΩ
Equivalent Circuit
MTB20N04J3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTB20N04J3-0-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green com.
Full PDF Text Transcription for MTB20N04J3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MTB20N04J3. For precise diagrams, and layout, please refer to the original PDF.
CYStech Electronics Corp. Spec. No. : C978J3 Issued Date : 2015.01.05 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB20N04J3 BVDSS ID@VGS=10V, ...
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N -Channel Enhancement Mode Power MOSFET MTB20N04J3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C Features RDSON(TYP) VGS=10V, ID=10A VGS=4.5V, ID=8A • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package 40V 23A 16.3A 17.5mΩ 20.
MTB20N04J3 Datasheet
