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MTB20N04J3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • RDSON(TYP) VGS=10V, ID=10A VGS=4.5V, ID=8A.
  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating package 40V 23A 16.3A 17.5mΩ 20.8mΩ Equivalent Circuit MTB20N04J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB20N04J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green com.

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Datasheet Details

Part number MTB20N04J3
Manufacturer CYStech
File Size 389.76 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB20N04J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C978J3 Issued Date : 2015.01.05 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB20N04J3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C Features RDSON(TYP) VGS=10V, ID=10A VGS=4.5V, ID=8A • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package 40V 23A 16.3A 17.5mΩ 20.