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CYStech

MTB4D0N03ATV8 Datasheet Preview

MTB4D0N03ATV8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB4D0N03ATV8
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free lead plating and halogen-free package
BVDSS
ID @ VGS=10V
VGS=10V, ID=15A
RDSON(TYP)
VGS=4.5V, ID=12A
30V
15A
4.7mΩ
6.7mΩ
Equivalent Circuit
MTB4D0N03ATV8
Outline
Pin 1
DFN3×3
GGate DDrain SSource
Ordering Information
Device
MTB4D0N03ATV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13reel
Product rank, zero for no rank products
Product name
MTB4D0N03ATV8
CYStek Product Specification




CYStech

MTB4D0N03ATV8 Datasheet Preview

MTB4D0N03ATV8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25C
Continuous Drain Current @ VGS=10V, TC=100C
Continuous Drain Current @ VGS=10V, TA=25C
Continuous Drain Current @ VGS=10V, TA=70C
Pulsed Drain Current
Avalanche Energy @ L=0.1mH, ID=43A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TC=25
Total Power Dissipation
TC=100
TA=25
TA=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
EAS
EAR
PD
PDSM
Tj, Tstg
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 2/9
Limits
30
±20
43
27
15
12
140 *1
92.5
4.9
21
8.4
2.5 *2
1.6 *2
-55~+150
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
6 C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *2 C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in²pad of 2oz copper. In practice Rth,j-a will be determined by customers PCB characteristics.
125°C/W when mounted on a minimum pad of 2 oz. copper.
Characteristics (TC=25C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
30 -
-
1 1.8 2.0
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
GFS *1
-
25
-
S VDS =5V, ID=15A
IGSS
-
-
±100
nA VGS=±20V
IDSS
- - 1 μA VDS =24V, VGS =0
- - 25
VDS =24V, VGS =0, Tj=125C
RDS(ON) *1
-
-
4.7
6.7
7.0
10
mΩ
VGS =10V, ID=15A
VGS =4.5V, ID=12A
Dynamic
Ciss - 1511 -
Coss
- 299 -
pF VDS=15V, VGS=0V, f=1MHz
Crss - 208 -
Qg *1, 2
-
30
-
Qgs *1, 2
-
4.6
-
nC VDS=15V, VGS=10V, ID=15A
Qgd *1, 2
-
9.3
-
Rg - 4.3 - Ω VDS=0V, f=1MHz
MTB4D0N03ATV8
CYStek Product Specification


Part Number MTB4D0N03ATV8
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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