MTB6D0N03BH8 - N-Channel Enhancement Mode Power MOSFET

Name: MTB6D0N03BH8
SKU: MTB6D0N03BH8-994011

CYStech

The MTB6D0N03BH8 by CYStech is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	MTB6D0N03BH8
Manufacturer	CYStech
File Size	401.55 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB6D0N03BH8-CYStech.pdf
Additional preview pages of the MTB6D0N03BH8 datasheet.

Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Dynamic dv/dt rating.
Repetitive Avalanche Rated.
Pb-free lead plating and Halogen-free package BVDSS ID RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=4.5V, ID=20A 30V 56A 6.4 mΩ(typ) 10.4 mΩ(typ) Symbol MTB6D0N03BH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTB6D0N03BH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free packa.

📁 MTB6D0N03BH8 Similar Datasheet

MTB6D0N03BJ3 - N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB600N03N3 - 30V N-CHANNEL MOSFET (Cystech Electonics)
MTB60A03KQ8 - Dual N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB60A06DH8 - Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB60A06Q8 - Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB60B06Q8 - Dual P-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB60N06HD - TMOS POWER FET (Motorola)
MTB6N60E - TMOS POWER FET (Motorola)

Other Datasheets by CYStech

Published: Apr 28, 2016 |