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MTBB0P10AJ3 - P-Channel Enhancement Mode Power MOSFET

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTBB0P10AJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTBB0P10AJ3-0-T3-G Package Shipping TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & re.

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Datasheet Details

Part number MTBB0P10AJ3
Manufacturer CYStech
File Size 393.90 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBB0P10AJ3 Datasheet
Additional preview pages of the MTBB0P10AJ3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C163J3 Issued Date : 2015.05.29 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTBB0P10AJ3 BVDSS ID@VGS=-10V, TC=25°C RDSON@VGS=-10V, ID=-4.7A RDSON@VGS=-6V, ID=-1A -100V -10A 280mΩ (typ.) 298mΩ (typ.
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