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CYStech

MTBB0P10AJ3 Datasheet Preview

MTBB0P10AJ3 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C163J3
Issued Date : 2015.05.29
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTBB0P10AJ3 BVDSS
ID@VGS=-10V, TC=25°C
RDSON@VGS=-10V, ID=-4.7A
RDSON@VGS=-6V, ID=-1A
-100V
-10A
280mΩ (typ.)
298mΩ (typ.)
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTBB0P10AJ3
Outline
TO-252(DPAK)
GGate DDrain
SSource
G DS
Ordering Information
Device
MTBB0P10AJ3-0-T3-G
Package
Shipping
TO-252
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBB0P10AJ3
CYStek Product Specification




CYStech

MTBB0P10AJ3 Datasheet Preview

MTBB0P10AJ3 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.5mH, ID=-10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25
Total Power Dissipation @TC=100
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
Spec. No. : C163J3
Issued Date : 2015.05.29
Revised Date :
Page No. : 2/9
Limits
-100
±30
-10
-6.3
-40
-10
25
5
50
20
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.5
110
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
-100 -
-2 -
-
-4
V
VGS=0V, ID=-250μA
VDS =VGS, ID=-250μA
-
-
±100
nA VGS=±30V, VDS=0V
IDSS
RDS(ON) *1
GFS *1
-
-
-
-
-
-
-
-1
-25
μA
VDS =-100V, VGS =0V
VDS =-100V, VGS =0V, TJ=125°C
280
298
336
360
mΩ
VGS =-10V, ID=-4.7A
VGS =-6V, ID=-1A
5.5 - S VDS =-10V, ID=-4.7A
Dynamic
Qg *1, 2
Qgs *1, 2
- 11.1 -
- 3 - nC ID=-1.5A, VDS=-80V, VGS=-10V
Qgd *1, 2
- 3.1 -
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
- 9.4 -
- 17.2 -
- 28.8 -
- 33.2 -
- 551 -
ns
VDS=-50V, ID=-1A, VGS=-10V,
RG=6Ω
Coss
- 54 - pF VGS=0V, VDS=-25V, f=1MHz
Crss - 26 -
MTBB0P10AJ3
CYStek Product Specification


Part Number MTBB0P10AJ3
Description P-Channel Enhancement Mode Power MOSFET
Maker CYStech
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