MTN10N60E3 mosfet equivalent, n-channel enhancement mode power mosfet.
* BVDSS=650V typically @ Tj=150℃
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant.
Features
* BVDSS=650V typically @ Tj=150℃
* Low On Resistance
* Simple Drive Requirement
* Low Gate Char.
The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commerc.
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