MTN12N60E3 mosfet equivalent, n-channel enhancement mode power mosfet.
* BVDSS=660V typically @ Tj=150℃
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant.
Features
* BVDSS=660V typically @ Tj=150℃
* Low On Resistance
* Simple Drive Requirement
* Low Gate Cha.
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