MTN2302N3 mosfet equivalent, n-channel enhancement mode mosfet.
* VDS=20V
RDS(ON)=65mΩ@VGS=4.5V, IDS=3.6A
RDS(ON)=95mΩ@VGS=2.5V, IDS=3.1A
* Advanced trench process technology
* High density cell design for ultra low on res.
or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, .
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