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MTN2328N3 - N-Channel Enhancement Mode MOSFET

Features

  • VDS=100V RDS(ON)(typ)=125mΩ@VGS=10V, ID=1.5A.
  • Low on-resistance.
  • Low gate charge.
  • Excellent thermal and electrical capabilities.
  • Pb-free lead plating and halogen-free package BVDSS ID RDSON(TYP) 100V 1.9A 125mΩ Equivalent Circuit MTN2328N3 Outline SOT-23 D G:Gate S:Source D:Drain GS Ordering Information Device MTN2328N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendl.

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Datasheet Details

Part number MTN2328N3
Manufacturer CYStech
File Size 300.16 KB
Description N-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C583N3 Issued Date : 2011.05.18 Revised Date : 2013.11.22 Page No. : 1/ 8 100V N-Channel Enhancement Mode MOSFET MTN2328N3 Features • VDS=100V RDS(ON)(typ)=125mΩ@VGS=10V, ID=1.5A • Low on-resistance • Low gate charge • Excellent thermal and electrical capabilities • Pb-free lead plating and halogen-free package BVDSS ID RDSON(TYP) 100V 1.
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