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MTN2342N3 - N-Channel Enhancement Mode MOSFET

Features

  • Low on-resistance VGS=1.5V, ID=5.5A VGS=1.2V, ID=1.3A.
  • Low voltage gate drive, 1.2V to 5V.
  • Excellent thermal and electrical capabilities.
  • Pb-free lead plating and halogen-free package 16V 6A 15.4mΩ 17.2mΩ 19.8mΩ 22.5mΩ 26.7mΩ Equivalent Circuit MTN2342N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTN2342N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment.

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Datasheet Details

Part number MTN2342N3
Manufacturer CYStech
File Size 275.72 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTN2342N3 Datasheet
Additional preview pages of the MTN2342N3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C710N3 Issued Date : 2013.12.18 Revised Date : Page No. : 1/ 9 16V N-Channel Enhancement Mode MOSFET MTN2342N3 BVDSS ID @VGS=4.5V VGS=4.5V, ID=7.2A VGS=2.5V, ID=6.7A RDSON(TYP) VGS=1.8V, ID=6.4A Features • Low on-resistance VGS=1.5V, ID=5.5A VGS=1.2V, ID=1.3A • Low voltage gate drive, 1.2V to 5V • Excellent thermal and electrical capabilities • Pb-free lead plating and halogen-free package 16V 6A 15.4mΩ 17.2mΩ 19.8mΩ 22.5mΩ 26.
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