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CYStech Electronics Corp.
30V P-CHANNEL Enhancement Mode MOSFET
MTP162M3
Spec. No. : C420M3 Issued Date : 2007.10.08 Revised Date : 2013.08.12 Page No. : 1/8
Features
• Single Drive Requirement • Low On-resistance, RDS(ON)=80mΩ@VGS=-4.5V, ID=-3.0A
• Ultra High Speed Switching • Pb-free package
Symbol
MTP162M3
Outline
SOT-89
G：Gate S：Source D：Drain
G DD S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃)
VDS VGS ID ID IDM Pd
-30 ±12 -5 -4 -20 *1, 3
2 *2
Linear Derating Factor
0.02
Thermal Resistance, Junction to Ambient
Rth,ja
62.
MTP162M3 Datasheet
