TIP31CJ3 - 3A NPN Epitaxial Planar Power Transistor

Description

TIP31CJ3 is designed for use in general purpose amplifier and switching applications.

Features

Low collector-emitter saturation voltage, VCE(sat) = 0.5V(max) @ IC = 3A.
High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min).
High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA.
Pb-free lead plating and halogen-free package Symbol TIP31CJ3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device TIP31CJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tap.

CYStech

📥 Download Datasheet

Datasheet Details

Part number	TIP31CJ3
Manufacturer	CYStech
File Size	274.13 KB
Description	3A NPN Epitaxial Planar Power Transistor
Datasheet	TIP31CJ3 Datasheet
Additional preview pages of the TIP31CJ3 datasheet.

📁 Similar Datasheet

TIP31C - Power Transistors (RECTRON)
TIP31C - NPN TRANSISTORS (CDIL)
TIP31C - Silicon NPN Transistors (NTE)
TIP31C - POWER TRANSISTORS (Motorola)
TIP31C - Epitaxial Planar NPN Transistor (GME)
TIP31C - Power transistor (STMicroelectronics)
TIP31C - Silicon NPN Power Transistors (SavantIC)
TIP31C - NPN EXPITAXIAL PLANAR TRANSISTOR (UTC)
TIP31C - NPN Transistor (INCHANGE)
TIP31C - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)

Other Datasheets by CYStech

Full PDF Text Transcription

Click to expand full text

CYStech Electronics Corp. 3A NPN Epitaxial Planar Power Transistor TIP31CJ3 Spec. No. : C609J3 Issued Date : 2014.06.06 Revised Date : Page No. : 1/6 Description TIP31CJ3 is designed for use in general purpose amplifier and switching applications. Features • Low collector-emitter saturation voltage, VCE(sat) = 0.

Published: Apr 27, 2016 |