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DAN217S6R - High speed multi-chip diode

General Description

The DAN217S6R consists of two set of high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small SOT-363 plastic SMD package.

Key Features

  • Small plastic SMD package High switching speed: max. 4ns Continuous reverse voltage: max. 75V Repetitive peak reverse voltage: max. 85V Repetitive peak forward current: max. 450mA. Very low leakage current Pb-free package.

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Datasheet Details

Part number DAN217S6R
Manufacturer CYStech Electronics
File Size 291.64 KB
Description High speed multi-chip diode
Datasheet download datasheet DAN217S6R Datasheet

Full PDF Text Transcription for DAN217S6R (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DAN217S6R. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. High –speed multi-chip diode Spec. No. : C328S6 Issued Date : 2009.11.23 Revised Date : Page No. : 1/6 DAN217S6R Description The DAN217S6R consi...

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evised Date : Page No. : 1/6 DAN217S6R Description The DAN217S6R consists of two set of high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small SOT-363 plastic SMD package. Equivalent Circuit DAN217S6R Outline SOT-363 1:Anode 2:Cathode Features • • • • • • • Small plastic SMD package High switching speed: max. 4ns Continuous reverse voltage: max. 75V Repetitive peak reverse voltage: max. 85V Repetitive peak forward current: max. 450mA. Very low leakage current Pb-free package Applications • High-speed switching in thick and thin-film circuits. DAN217S6R CYStek Product