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CYStech Electronics

HBC114ES6R Datasheet Preview

HBC114ES6R Datasheet

Dual NPN Digital Transistor

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CYStech Electronics Corp.
Dual NPN Digital Transistors
HBC114ES6R
Spec. No. : C351S6R
Issued Date : 2003.05.22
Revised Date : 2019.01.22
Page No. : 1/6
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.
Two DTC114E chips in a SOT-363 package.
Mounting by SOT-323 automatic mounting machines is possible.
Mounting cost and area can be cut in half.
Transistor elements are independent, eliminating interference.
Complements the HBA114ES6R.
Pb-free lead plating and halogen-free package.
Equivalent Circuit
HBC114ES6R
TR1
RBE2
RB2
RB1
RBE1
TR2
RB1=10k, RB2=10 k
RBE1=10k, RBE2=10 k
Outline
SOT-363R
HBC114ES6R
CYStek Product Specification




CYStech Electronics

HBC114ES6R Datasheet Preview

HBC114ES6R Datasheet

Dual NPN Digital Transistor

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C351S6R
Issued Date : 2003.05.22
Revised Date : 2019.01.22
Page No. : 2/6
Ordering Information
Device
HBC114ES6R-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7reel
Product rank, zero for no rank products
Product name
Absolute Maximum Ratings (Each Transistor, Ta=25)
Parameter
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Limits
Unit
50
V
-10~+40
V
50
mA
100
mA
200 *1
mW
-55~+150
C
-55~+150
C
Note:*1.150mW per element must not be exceeded.
Characteristics (Each Transistor, Ta=25)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
-
3
-
-
-
30
7
0.8
-
Typ. Max. Unit
Test Conditions
- 0.5 V VCC=5V, IO=100μA
-
-
V VO=0.3V, IO=10mA
0.1 0.3 V IO/II=10mA/0.5mA
- 0.88 mA VI=5V
- 0.5 μA VCC=50V, VI=0V
-
-
- VO=5V, IO=5mA
10 13 k-
1 1.2 - -
250 - MHz VCE=10V, IC=5mA, f=100MHz*
* Transition frequency of the device
HBC114ES6R
CYStek Product Specification



Part Number HBC114ES6R
Description Dual NPN Digital Transistor
Maker CYStech Electronics
Total Page 3 Pages
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