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CYStech Electronics

HBC114TS6R Datasheet Preview

HBC114TS6R Datasheet

Dual NPN Digital Transistor

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CYStech Electronics Corp.
Dual NPN Digital Transistors
HBC114TS6R
Spec. No. : C353S6R
Issued Date : 2003.05.23
Revised Date : 2011.02.22
Page No. : 1/6
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.
Two DTC114T chips in a SOT-363 package.
Mounting by SOT-323 automatic mounting machines is possible.
Mounting cost and area can be cut in half.
Transistor elements are independent, eliminating interference.
Complements the HBA114TS6R.
Pb-free package
Equivalent Circuit
HBC114TS6R
Outline
SOT-363R
RB2
TR1
TR2
RB1
RB1=10kΩ , RB2=10 kΩ
HBC114TS6R
CYStek Product Specification




CYStech Electronics

HBC114TS6R Datasheet Preview

HBC114TS6R Datasheet

Dual NPN Digital Transistor

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C353S6R
Issued Date : 2003.05.23
Revised Date : 2011.02.22
Page No. : 2/6
Absolute Maximum Ratings (Each Transistor,Ta=25)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
Unit
50
V
50
V
5
V
100
mA
200 (Note)
mW
150
°C
-55~+150
°C
Note: 150mW per element must not be exceeded.
Characteristics (Each Transistor, Ta=25)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation
Voltage
DC Current Gain
Input Resistance
Transition Frequency
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min. Typ. Max. Unit
Test Conditions
50 -
- V IC=50μA
50 -
- V IC=1mA
5-
- V IE=50μA
-
- 0.5 μA VCB=50V
-
- 0.5 μA VEB=4V
- - 0.3 V IC=10mA, IB=1mA
100 - 600 - VCE=5V, IC=1mA
7 10 13 kΩ -
- 250 - MHz VCE=10V, IC=5mA, f =100MHz *
* Transition frequency of the device
Ordering Information
Device
HBC114TS6R
Package
SOT-363
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
7E
HBC114TS6R
CYStek Product Specification



Part Number HBC114TS6R
Description Dual NPN Digital Transistor
Maker CYStech Electronics
Total Page 3 Pages
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