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CYStech Electronics

HBC143ZS6R Datasheet Preview

HBC143ZS6R Datasheet

Dual NPN Digital Transistor

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CYStech Electronics Corp.
Dual NPN Digital Transistors
HBC143ZS6R
Spec. No. : C371S6R
Issued Date : 2003.09.05
Revised Date :2014.01.08
Page No. : 1/6
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.
Two DTC143Z chips in a SOT-363 package.
Mounting by SOT-323 automatic mounting machines is possible.
Mounting cost and area can be cut in half.
Transistor elements are independent, eliminating interference.
Complements the HBA143ZS6R.
Pb-free lead plating and halogen-free package.
Equivalent Circuit
HBC143ZS6R
Outline
SOT-363R
RBE2
RB2
TR1
TR2
RB1
RBE1
RB1=4.7kΩ , RB2=4.7 kΩ
RBE1=47kΩ , RBE2=47 kΩ
Ordering Information
Device
Package
HBC143ZS6R-0-T1-G
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
HBC143ZS6R
CYStek Product Specification




CYStech Electronics

HBC143ZS6R Datasheet Preview

HBC143ZS6R Datasheet

Dual NPN Digital Transistor

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor, Ta=25)
Spec. No. : C371S6R
Issued Date : 2003.09.05
Revised Date :2014.01.08
Page No. : 2/6
Parameter
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Limits
Unit
50
V
-5~+30
V
100
mA
100
mA
200 (Note)
mW
-55~+150
°C
-55~+150
°C
Note : 150mW per element must not be exceeded.
Characteristics (Each Transistor, Ta=25)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
-
1.3
-
-
-
80
3.29
8
-
Typ. Max. Unit
Test Conditions
- 0.5 V VCC=5V, IO=100μA
-
-
V VO=0.3V, IO=5mA
0.1 0.3 V IO/II=5mA/0.25mA
- 1.8 mA VI=5V
- 0.5 μA VCC=50V, VI=0V
-
-
- VO=5V, IO=10mA
4.7 6.11 kΩ -
10 12 - -
250 - MHz VCE=10V, IC=5mA, f=100MHz*
* Transition frequency of the device
HBC143ZS6R
CYStek Product Specification



Part Number HBC143ZS6R
Description Dual NPN Digital Transistor
Maker CYStech Electronics
Total Page 3 Pages
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