HQN2498QF - Quadruple High Voltage NPN Epitaxial Planar Transistor
CYStech Electronics
General Description
High breakdown voltage.
Low saturation voltage, typical VCE(sat) =0.13V at Ic/IB =20mA/1mA.
Complementary to HQP1498QF
Pb-free package
Equivalent Circuit
HQN2498QF
Outline
SOP-10
The following ratings and characteristics apply to each transisto
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CYStech Electronics Corp.
Quadruple High Voltage NPN Epitaxial Planar Transistor
Built-in Base Resistor
Spec. No. : C899QF Issued Date : 2009.11.09 Revised Date : 2009.12.23 Page No. : 1/6
HQN2498QF
Description
• High breakdown voltage. (BVCEO=400V) • Low saturation voltage, typical VCE(sat) =0.13V at Ic/IB =20mA/1mA. • Complementary to HQP1498QF • Pb-free package
Equivalent Circuit
HQN2498QF
Outline
SOP-10
The following ratings and characteristics apply to each transistor in this device. Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
HQN2498QF Preliminar
Symbol VCBO VCEO VEBO IC Pd Tj Tstg
Limits 400 400 7 300 1.
HQN2498QF Datasheet
