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CYStech Electronics

MTB11N03BQ8 Datasheet Preview

MTB11N03BQ8 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB11N03BQ8 BVDSS
ID@VGS=10V, TA=25°C
RDSON(typ)@VGS=10V, ID=12A
RDSON(typ)@VGS=4.5V, ID=12A
30V
12A
8.8mΩ
12.8mΩ
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free and Halogen-free package
Symbol
MTB11N03BQ8
Outline
Pin 1
SOP-8
GGate DDrain SSource
Ordering Information
Device
MTB11N03BQ8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB11N03BQ8
CYStek Product Specification




CYStech Electronics

MTB11N03BQ8 Datasheet Preview

MTB11N03BQ8 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V*3
Continuous Drain Current @ TA=70°C, VGS=10V*3
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, ID=12A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation *3
TA=25
TA=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
10s Steady State
30
±25
12 8.3
7.6 6.6
48 *1
12
72
5 *2
2.5 1.4
1.6 0.9
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol Typical Maximum Unit
Thermal Resistance, Junction-to-ambient *3
t10s
Steady State
RθJA
35
70
40
85 °C/W
Thermal Resistance, Junction-to case
Steady State
RθJC
16
25
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle1%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Ciss
Coss
Crss
30
1.0
-
-
-
-
-
-
-
-
-
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
19 -
S VDS =5V, ID=11A
-
±100
nA VGS=±25V
-
-
1
5
μA
VDS =30V, VGS =0V
VDS =24V, VGS =0V, Tj=55°C
8.8 12 mΩ VGS =10V, ID=12A
12.8 17 mΩ VGS =4.5V, ID=12A
751 -
199 -
106 -
pF VGS=0V, VDS=10V, f=1MHz
MTB11N03BQ8
CYStek Product Specification


Part Number MTB11N03BQ8
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Maker CYStech Electronics
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