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CYStech Electronics

MTB11N03BV8 Datasheet Preview

MTB11N03BV8 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : CA00V8
Issued Date : 2015.05.25
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB11N03BV8 BVDSS
ID @ TC=25°C, VGS=10V
30V
44A
ID @ TA=25°C, VGS=10V
14A
RDSON(TYP)
VGS=10V, ID=14A 7.3mΩ
VGS=4.5V, ID=12A 11.2mΩ
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB11N03BV8
Outline
Pin 1
DFN3×3
GGate DDrain SSource
Ordering Information
Device
MTB11N03BV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB11N03BV8
CYStek Product Specification




CYStech Electronics

MTB11N03BV8 Datasheet Preview

MTB11N03BV8 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C(Silicon Limit)
Continuous Drain Current @ VGS=10V, TC=100°C(Silicon Limit)
Continuous Drain Current @ VGS=10V, TC=25°C(Package Limit)
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=21A, RG=25Ω
Total Power Dissipation
TC=25
TA=25
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
Spec. No. : CA00V8
Issued Date : 2015.05.25
Revised Date :
Page No. : 2/9
Limits
30
±25
44
27.8
26
14
11.2
56 *1
30
22
36
3.5 *2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
3.5 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
36 *2
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper, t10s. In practice Rth,j-a will be determined by customer’s PCB characteristics.
125°C/W when mounted on a minimum pad of 2 oz. copper.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Ciss
Coss
Crss
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
30
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
18 -
S VDS =5V, ID=11A
-
±100
nA VGS=±25V
-
-
1
5
μA
VDS =30V, VGS =0V
VDS =24V, VGS =0V, Tj=55°C
7.3
11.2
8.8
13.4
mΩ
VGS =10V, ID=14A
VGS =4.5V, ID=12A
745 -
168 -
95 -
15.8 -
3-
3.6 -
pF VDS=15V, VGS=0V, f=1MHz
nC VDS=15V, VGS=10V, ID=19A
MTB11N03BV8
CYStek Product Specification


Part Number MTB11N03BV8
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Maker CYStech Electronics
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